ON THE HIGH-ELECTRIC-FIELD MOBILITY BEHAVIOR IN SI MOSFETS FROM ROOM TO LIQUID-HELIUM TEMPERATURE

被引：11

作者：

RAIS, K

BALESTRA, F

GHIBAUDO, G

机构：

[1] Laboratoire de Physique des Composants à Semiconducteurs, URA CNRS, ENSERG, INPG, Grenoble

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1994年 / 145卷 / 01期

关键词：

D O I：

10.1002/pssa.2211450120

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The carrier mobility in N- und P-channel MOSFET's at high transverse electric field is studied from room to liquid helium temperature. It is shown that the negative transconductance phenomenon obtained at high gate voltage is enlarged by decreasing the temperature. This behavior is attributed to a change in the mobility law for high transverse electric field. An accurate extraction method is proposed in order to determine the new parameters involved in the mobility and the drain current laws. These new relations are successfully employed for the fitting of experimental results obtained with MOS devices from various technologies.

引用

页码：217 / 221

页数：5

共 9 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].