RADIATION-INDUCED INTERFACE-STATE GENERATION IN MOS DEVICES

[1] BOESCH HE, 1982, IEEE T NUCL SCI, V29, P1446

[2] CHARGE AND INTERFACE STATE GENERATION IN FIELD OXIDES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1273 - 1279

[3] HOLE TRANSPORT AND CHARGE RELAXATION IN IRRADIATED SIO2 MOS CAPACITORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2163 - 2167

[4] ENHANCED FLATBAND VOLTAGE RECOVERY IN HARDENED THIN MOS CAPACITORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) : 1239 - 1245

[5] ELECTRON-HOLE RECOMBINATION IN IRRADIATED SIO2 FROM A MICRODOSIMETRY VIEWPOINT [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 4142 - 4144

[6] EFFECT OF PHOTON ENERGY ON THE RESPONSE OF MOS DEVICES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 4137 - 4141

[7] ACCOUNTING FOR DOSE-ENHANCEMENT EFFECTS WITH CMOS TRANSISTORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) : 4369 - 4375

[8] DIFFUSION OF RADIOLYTIC MOLECULAR-HYDROGEN AS A MECHANISM FOR THE POST-IRRADIATION BUILDUP OF INTERFACE STATES IN SIO2-ON-SI STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2524 - 2533

[9] RADIATION-INDUCED DEFECTS IN SIO2 AS DETERMINED WITH XPS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1462 - 1466

[10] HOLE MOBILITY AND TRANSPORT IN THIN SIO2-FILMS [J]. APPLIED PHYSICS LETTERS, 1975, 26 (08) : 436 - 438

[1] BOESCH HE, 1982, IEEE T NUCL SCI, V29, P1446

[2] CHARGE AND INTERFACE STATE GENERATION IN FIELD OXIDES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1273 - 1279

[3] HOLE TRANSPORT AND CHARGE RELAXATION IN IRRADIATED SIO2 MOS CAPACITORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2163 - 2167

[4] ENHANCED FLATBAND VOLTAGE RECOVERY IN HARDENED THIN MOS CAPACITORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) : 1239 - 1245

[5] ELECTRON-HOLE RECOMBINATION IN IRRADIATED SIO2 FROM A MICRODOSIMETRY VIEWPOINT [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 4142 - 4144

[6] EFFECT OF PHOTON ENERGY ON THE RESPONSE OF MOS DEVICES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 4137 - 4141

[7] ACCOUNTING FOR DOSE-ENHANCEMENT EFFECTS WITH CMOS TRANSISTORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) : 4369 - 4375

[8] DIFFUSION OF RADIOLYTIC MOLECULAR-HYDROGEN AS A MECHANISM FOR THE POST-IRRADIATION BUILDUP OF INTERFACE STATES IN SIO2-ON-SI STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2524 - 2533

[9] RADIATION-INDUCED DEFECTS IN SIO2 AS DETERMINED WITH XPS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1462 - 1466

[10] HOLE MOBILITY AND TRANSPORT IN THIN SIO2-FILMS [J]. APPLIED PHYSICS LETTERS, 1975, 26 (08) : 436 - 438