HETEROGENEOUS DISTRIBUTION OF INTERSTITIAL OXYGEN IN ANNEALED CZOCHRALSKI-GROWN SILICON-CRYSTALS

被引：34

作者：

SHIMURA, F

OHNISHI, Y

TSUYA, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 11期

关键词：

D O I：

10.1063/1.92202

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：867 / 870

页数：4

共 15 条

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[10]

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