RELATIONS BETWEEN STRUCTURAL PARAMETERS AND PHYSICAL-PROPERTIES IN CDTE AND CD0.96ZN0.04TE ALLOYS

被引：4

作者：

GUERGOURI, K

MARFAING, Y

TRIBOULET, R

TROMSONCARLI, A

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1990年 / 25卷 / 06期

关键词：

D O I：

10.1051/rphysap:01990002506048100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：481 / 488

页数：8

共 24 条

[1]

ALEKSEENKO MV, 1970, SOV PHYS SEMICOND+, V4, P349

[2] TE AND CD NMR-STUDY OF LOCAL-STRUCTURE AND BONDING IN CD1-XZNXTE [J].

BESHAH, K ;

ZAMIR, D ;

BECLA, P ;

WOLFF, PA ;

GRIFFIN, RG .

PHYSICAL REVIEW B, 1987, 36 (12) :6420-6425

[3] LINEARITY (COMMUTATIVITY AND TRANSITIVITY) OF VALENCE-BAND DISCONTINUITY IN HETEROJUNCTIONS WITH TE-BASED II-VI SEMICONDUCTORS - CDTE, HGTE, AND ZNTE [J].

DUC, TM ;

HSU, C ;

FAURIE, JP .

PHYSICAL REVIEW LETTERS, 1987, 58 (11) :1127-1130

[4] MECHANISM FOR DISLOCATION DENSITY REDUCTION IN GAAS CRYSTALS BY INDIUM ADDITION [J].

EHRENREICH, H ;

HIRTH, JP .

APPLIED PHYSICS LETTERS, 1985, 46 (07) :668-670

[5] THE ESTIMATION OF DISLOCATION DENSITIES IN METALS FROM X-RAY DATA [J].

GAY, P ;

HIRSCH, PB ;

KELLY, A .

ACTA METALLURGICA, 1953, 1 (03) :315-319

[6]

GOEDE O, 1978, PHYS STATUS SOLIDI B, V89, P183

[7]

GROSS EF, 1971, FIZ TVERD TELA+, V12, P2352

[8] SOLUTION HARDENING AND DISLOCATION DENSITY REDUCTION IN CDTE CRYSTALS BY ZN ADDITION [J].

GUERGOURI, K ;

TRIBOULET, R ;

TROMSONCARLI, A ;

MARFAING, Y .

JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :61-65

[9] ETCH PITS AND POLARITY IN CDTE CRYSTALS [J].

INOUE, M ;

TAKAYANAGI, S ;

TERAMOTO, I .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (08) :2578-&

[10] BLOCKING OF THREADING DISLOCATIONS BY HG1-XCDXTE EXPITAXIAL LAYERS [J].

JAMES, TW ;

STOLLER, RE .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :56-58

← 1 2 3 →