SUBTHRESHOLD CHARACTERISTICS OF FULLY DEPLETED SUBMICROMETER SOI MOSFETS

被引：30

作者：

HSIAO, TC

WOO, JCS

机构：

[1] University of California, Department of Electrical Engineering, Los Angeles

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 06期

关键词：

D O I：

10.1109/16.387246

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, an analytic current-voltage model in the subthreshold regime for submicrometer fully depleted (FD) silicon-on-insulator (SOI) MOSFET's is presented. This model takes into account the dependence of the effective depleted charge on the drain bias and the voltage drop in the substrate region underneath the buried oxide. In addition to predicting accurate subthreshold current-voltage characteristics and subthreshold slope, this model can be used to predict important Short Channel Effects (SCE) such as the threshold voltage roll-off and Drain-Induced Barrier Lowering (DIBL), This model is verified by comparison to a two-dimensional device simulator, MEDICI. Good agreement is obtained for SOI channel lengths down to 0.25 mu m.

引用

页码：1120 / 1125

页数：6

共 17 条

[1]

Colinge J.-P., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P817, DOI 10.1109/IEDM.1989.74178

[2] SUBTHRESHOLD SLOPE OF THIN-FILM SOI MOSFETS [J].