IMPLANTATION CHARACTERISTICS OF INSB

被引：15

作者：

PEARTON, SJ

NAKAHARA, S

VONNEIDA, AR

SHORT, KT

OSTER, LJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 05期

关键词：

D O I：

10.1063/1.344329

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1942 / 1946

页数：5

共 16 条

[1]

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[2]

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[8]

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[9]

OPYD WG, 1985, MATER RES SOC S P, V45, P273

[10] ION-IMPLANTATION DAMAGE AND ANNEALING IN INAS, GASB, AND GAP [J].

PEARTON, SJ ;

VONNEIDA, AR ;

BROWN, JM ;

SHORT, KT ;

OSTER, LJ ;

CHAKRABARTI, UK .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (02) :629-636

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