RELATIVE INTENSITY NOISE OF VERTICAL CAVITY SURFACE EMITTING LASERS

被引:47
作者
KUCHTA, DM
GAMELIN, J
WALKER, JD
LIN, J
LAU, KY
SMITH, JS
HONG, M
MANNAERTS, JP
机构
[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
[2] AT&T BELL LABS,MURRAY HILL,NJ 07974
[3] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
关键词
D O I
10.1063/1.108731
中图分类号
O59 [应用物理学];
学科分类号
摘要
A study of the relative intensity noise (RIN) of two all semiconductor vertical cavity surface emitting lasers is presented. We find that the slope of the low frequency RIN agrees with theory for the fundamental mode only and that transverse modes introduce sharp changes in the RIN and put a limit on the minimum attainable RIN. For the fundamental mode, both devices achieve a RIN of less than - 140 dB/Hz for optical powers less than 1 mW. This good performance is attributed to the high reflectivity of the cavity mirrors.
引用
收藏
页码:1194 / 1196
页数:3
相关论文
共 5 条
[1]   INTENSITY NOISE AND POLARIZATION STABILITY OF GAALAS-GAAS SURFACE EMITTING LASERS [J].
KOYAMA, F ;
MORITO, K ;
IGA, K .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1410-1416
[2]   ULTRAFAST (UP TO 39 GHZ) RELAXATION OSCILLATION OF VERTICAL CAVITY SURFACE EMITTING LASER [J].
LIN, J ;
GAMELIN, JK ;
LAU, KY ;
WANG, S ;
HONG, M ;
MANNAERTS, JP .
APPLIED PHYSICS LETTERS, 1992, 60 (01) :15-17
[3]   EXPLANATION OF LOW-FREQUENCY RELATIVE INTENSITY NOISE IN SEMICONDUCTOR-LASERS [J].
SU, CB ;
SCHLAFER, J ;
LAUER, RB .
APPLIED PHYSICS LETTERS, 1990, 57 (09) :849-851
[4]   VERTICAL-CAVITY SURFACE-EMITTING LASER-DIODES FABRICATED BY PHASE-LOCKED EPITAXY [J].
WALKER, JD ;
KUCHTA, DM ;
SMITH, JS .
APPLIED PHYSICS LETTERS, 1991, 59 (17) :2079-2081