SILICON AUTOCOMPENSATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：4

作者：

BALLINGALL, JM ^{[1
]}

MORRIS, BJ ^{[1
]}

LEOPOLD, DJ ^{[1
]}

RODE, DL ^{[1
]}

机构：

[1] WASHINGTON UNIV,DEPT ELECT ENGN,ST LOUIS,MO 63130

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 10期

关键词：

D O I：

10.1063/1.336780

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3571 / 3573

页数：3

共 15 条

[1]

AKIMOTO K, 1983, APPL PHYS LETT, V43, P1062, DOI 10.1063/1.94236

[2] INFRARED-ABSORPTION AND LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

AKIMOTO, K ;

DOHSEN, M ;

ARAI, M ;

WATANABE, N .

APPLIED PHYSICS LETTERS, 1984, 45 (09) :922-924

[3] CRYSTAL ORIENTATION DEPENDENCE OF SILICON AUTOCOMPENSATION IN MOLECULAR-BEAM EPITAXIAL GALLIUM-ARSENIDE [J].

BALLINGALL, JM ;

WOOD, CEC .

APPLIED PHYSICS LETTERS, 1982, 41 (10) :947-949

[4] LOW-TEMPERATURE PHOTO-LUMINESCENCE OF LIGHTLY SI-DOPED AND UNDOPED MBE GAAS [J].

BRIONES, F ;

COLLINS, DM .

JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (04) :847-866

[5] THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS [J].

CHAI, YG ;

WOOD, CEC ;

CHOW, R .

APPLIED PHYSICS LETTERS, 1981, 39 (10) :800-803

[6] EFFECT OF ACCELERATED-GROWTH RATE (1-5 MU-M-H) ON MOLECULAR-BEAM EPITAXIAL GAAS USING SI AS A DOPANT [J].

CHAI, YG .

APPLIED PHYSICS LETTERS, 1980, 37 (04) :379-382

[7] RADIATIVE LIFETIMES OF DONOR-ACCEPTOR PAIRS IN P-TYPE GALLIUM ARSENIDE [J].

DINGLE, R .

PHYSICAL REVIEW, 1969, 184 (03) :788-&

[8] GROWTH OF HIGH-PURITY GAAS-LAYERS BY MOLECULAR-BEAM EPITAXY [J].

HWANG, JCM ;

TEMKIN, H ;

BRENNAN, TM ;

FRAHM, RE .

APPLIED PHYSICS LETTERS, 1983, 42 (01) :66-68

[9] PHOTO-LUMINESCENCE STUDY OF THE INCORPORATION OF SILICON IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MENDEZ, EE ;

HEIBLUM, M ;

FISHER, R ;

KLEM, J ;

THORNE, RE ;

MORKOC, H .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) :4202-4204

[10] COMPENSATION EFFECTS IN SI-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

NOTTENBURG, R ;

BUHLMANN, HJ ;

FREI, M ;

ILEGEMS, M .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :71-73

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