FILM GROWTH-KINETICS OF CHEMICAL-VAPOR-DEPOSITION OF COPPER FROM CU(HFA)2

Copper films have been grown by chemical vapor deposition (CVD) from copper (II) hexafluoroacetylacetonate, Cu(HFA)2, in a cold wall, vertical flow reactor with pure hydrogen and a mixture of hydrogen (75%)/argon (25%). The quantitatively measured operating conditions were 10 Torr total pressure, 300 to 400-degrees-C substrate temperature, and 70 to 85-degrees-C precursor temperature. Film growth rates were between 100 to 1000 angstrom/min depending on processing conditions. The copper film growth rate was 0.5 order in both precursor and hydrogen concentration. A deposition temperature of about 300-degrees-C was needed to obtain significant film growth. Only surface impurities were detected in copper film. Any impurities below the surface were under the detection limits of Auger electron spectroscopy analysis. Resistivities of 2.0-3.0 muOMEGA cm were routinely obtained. Two mechanisms are proposed for the growth of copper films by CVD using Cu(HFA), which are consistent with our experimental observations and those in the literature.