COMPUTER-SIMULATION OF HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPE IMAGES BASED ON BALL-AND-SPOKE MODELS OF (100) SI/SIO2 INTERFACE

被引：10

作者：

OHDOMARI, I

MIHARA, T

KAI, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 11期

关键词：

D O I：

10.1063/1.337563

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3900 / 3904

页数：5

共 11 条

[1] DYNAMICAL THEORY FOR ELECTRON-SCATTERING FROM CRYSTAL DEFECTS AND DISORDER [J].

COWLEY, JM ;

FIELDS, PM .

ACTA CRYSTALLOGRAPHICA SECTION A, 1979, 35 (JAN) :28-37

[2] COMPUTED ELECTRON-MICROSCOPE IMAGES OF ATOMIC DEFECTS IN ECC METALS [J].

FIELDS, PM ;

COWLEY, JM .

ACTA CRYSTALLOGRAPHICA SECTION A, 1978, 34 (JAN) :103-112

[3]

GROVENOR CRM, P MATER RES SOC S, V37, P199

[4] LOCAL ATOMIC AND ELECTRONIC-STRUCTURE OF OXIDE-GAAS AND SIO2-SI INTERFACES USING HIGH-RESOLUTION XPS [J].

GRUNTHANER, FJ ;

GRUNTHANER, PJ ;

VASQUEZ, RP ;

LEWIS, BF ;

MASERJIAN, J ;

MADHUKAR, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1443-1453

[5] PROBING THE TRANSITION LAYER AT THE SIO2-SI INTERFACE USING CORE LEVEL PHOTOEMISSION [J].

HOLLINGER, G ;

HIMPSEL, FJ .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :93-95

[6] THEORY OF 3RD-ORDER ELASTIC CONSTANTS OF DIAMOND-LIKE CRYSTALS [J].

KEATING, PN .

PHYSICAL REVIEW, 1966, 149 (02) :674-&

[7] EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE [J].

KEATING, PN .

PHYSICAL REVIEW, 1966, 145 (02) :637-&

[8]

MAZUR JH, 1983, I PHYS C SER, V67, P77

[9] COMPUTER-SIMULATION OF HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY IMAGES OF SI/SIO2 INTERFACES [J].

OHDOMAN, I ;

MIHARA, T ;

KAI, K .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) :2798-2802

[10]

Pantelides ST, 1978, PHYSICS SIO2 ITS INT, P339

← 1 2 →