EFFECT OF LOCAL STRUCTURAL ORDER ON THE DOPING IN HYDROGENATED AMORPHOUS-SILICON (A-SI-H)

被引：10

作者：

DUSANE, RO ^{[1
]}

DUSANE, SR ^{[1
]}

BHIDE, VG ^{[1
]}

KSHIRSAGAR, ST ^{[1
]}

机构：

[1] NATL CHEM LAB,POONA 411008,MAHARASHTRA,INDIA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80070-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Doping in a-Si:H has been studied in the light of local structural order present in these films and the consequent modification in this upon dopant incorporation. It is seen that the local structural order is a very important parameter to understand the doping mechanism and variation in this correlates well with the variation in doping efficiency with increasing dopant concentration and the increase in the defect density. Interesting results on the compensated samples are also reported and discussed.

引用

页码：115 / 118

页数：4

共 8 条

[1] DEFECT CREATION BY 10-KEV ELECTRON-IRRADIATION IN PHOSPHORUS-DOPED A-SI-H [J].