ELECTRICAL-CONDUCTION IN THIN THERMALLY NITRIDED SIO2 (NITROXIDE)

被引：8

作者：

CHENG, XR

LIU, BY

CHENG, YC

机构：

来源：

APPLIED SURFACE SCIENCE | 1987年 / 30卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(87)90099-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：237 / 243

页数：7

共 14 条

[1] ANALYSIS OF CURRENT TRANSPORT AND CHARGE TRAPPING IN ULTRATHIN NITRIDED OXIDE MIS CAPACITORS [J].

CHANG, ST ;

LYON, SA ;

JOHNSON, NM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) :1972-1972

[2]

CHENG YC, IN PRESS

[3] THERMAL NITRIDATION OF SILICON DIOXIDE FILMS [J].

HABRAKEN, FHPM ;

KUIPER, AET ;

TAMMINGA, Y .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6996-7002

[4] DIRECT THERMAL NITRIDATION OF SILICON DIOXIDE FILMS IN ANHYDROUS AMMONIA GAS [J].

ITO, T ;

NOZAKI, T ;

ISHIKAWA, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (09) :2053-2057

[5] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J].

LENZLINGER, M ;

SNOW, EH .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :278-+

[6] THERMAL NITRIDATION OF SI AND SIO2 FOR VLSI [J].

MOSLEHI, MM ;

SARASWAT, KC .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (01) :26-43

[7] COMPOSITIONAL STUDIES OF THERMALLY NITRIDED SILICON DIOXIDE (NITROXIDE) [J].

MOSLEHI, MM ;

HAN, CJ ;

SARASWAT, KC ;

HELMS, CR ;

SHATAS, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) :2189-2197

[8] POSITIVE CHARGE GENERATION IN THIN SIO2-FILMS DURING NITRIDATION PROCESS [J].

PAN, P ;

PAQUETTE, C .

APPLIED PHYSICS LETTERS, 1985, 47 (05) :473-475

[9] POOLE-FRENKEL EFFECT AND SCHOTTKY EFFECT IN METAL-INSULATOR-METAL SYSTEMS [J].

SIMMONS, JG .

PHYSICAL REVIEW, 1967, 155 (03) :657-&

[10] CARRIER CONDUCTION IN ULTRATHIN NITRIDED OXIDE-FILMS [J].

SUZUKI, E ;

SCHRODER, DK ;

HAYASHI, Y .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) :3616-3621

← 1 2 →