SUBMICROMETER POLY-SI CMOS FABRICATION WITH LOW-TEMPERATURE LASER DOPING

被引：4

作者：

TOMITA, H

NEGISHI, M

SAMESHIMA, T

USUI, S

机构：

来源：

关键词：

D O I：

10.1109/55.43135

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：547 / 549

页数：3

共 7 条

CAREY, PG ;

WEINER, KH ;

SIGMON, TW .

COE, DJ .

[3] POLYSILICON SUPER-THIN-FILM TRANSISTOR (SFT) [J].

HAYASHI, H ;

NOGUCHI, T ;

OSHIMA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (11) :L819-L820

[4] P-N-JUNCTIONS IN POLYCRYSTALLINE-SILICON FILMS [J].

MANOLIU, J ;

KAMINS, TI .

[5] INSITU OBSERVATION OF PULSED LASER DOPING [J].

SAMESHIMA, T ;

TOMITA, H ;

USUI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (10) :L1935-L1937

[6]

SAMESHIMA T, 1987, J APPL PHYS, V62, P717

[7]

Tomita H., 1988, Extended Astracts of the 20th (1988 International) Conference on Solid State Devices and Materials, P113