MOVPE GROWTH OF INGAAS INALAS USING TRIMETHYLAMINE ALANE FOR PHOTONIC AND ELECTRONIC DEVICES

InAlAs/InGaAs was grown by low-pressure MOVPE using trimethylamine alane as an aluminum source. Although there is a parasitic reaction between trimethylindium and trimethylamine alane, the growth rate and lattice-matching are well controlled. The photoluminescence intensity for an InAlAs/InGaAs multi-quantum well structure is approximately 3 times higher than for one grown with trimethylaluminum. This is due to the lower oxygen incorporation in InAlAs layer. The crystal quality of InAlAs/InGaAs grown with trimethylamine alane was demonstrated by results for InGaAlAs/InGaAs multi-quantum well lasers and InAlAs/InGaAs high electron mobility transistors. Low threshold current density and high transconductance were realized for each device. These results indicate the usefulness of trimethylamine alane for the MOVPE growth of InAlAs/InGaAs.