GRINSCH GAAS/ALGAAS LASER STRUCTURES GROWN BY OMVPE USING A NOVEL ALUMINUM SOURCE

被引：6

作者：

HOBSON, WS ^{[1
]}

LEVI, AFJ ^{[1
]}

OGORMAN, J ^{[1
]}

PEARTON, SJ ^{[1
]}

ABERNATHY, CR ^{[1
]}

SWAMINATHAN, V ^{[1
]}

机构：

[1] AT&T BELL LABS,BREININGSVILLE,PA 18031

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 21期

关键词：

Semiconductor lasers;

D O I：

10.1049/el:19901132

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GRINSCH GaAs/AIGaAs laser structures grown by OMVPE using a novel aluminium source, trimethylamine alane, have been successfully fabricated. Broad-area made lasers made from the material have a threshold current density of 200 A cm-2. A V-grooved laser with a monolithically integrated intracavity loss modulator was used to vary the threshold current from Ith = 15 mA at an absorber voltage of Vs = 2·5 V to Ith = 210mA for Vs = -2·5 V. © 1990, The Institution of Electrical Engineers. All rights reserved.

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页码：1762 / 1764

页数：3

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