THE NUCLEATION KINETICS OF PLATELIKE OXIDE PRECIPITATES IN CZ-SILICON

被引:1
作者
JABLONSKI, J
WOJCIECHOWSKI, J
KUCHARSKI, K
机构
[1] Inst of Electron Technology CEMI, Warsaw, Pol, Inst of Electron Technology CEMI, Warsaw, Pol
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1988年 / 105卷 / 01期
关键词
D O I
10.1002/pssa.2211050110
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
28
引用
收藏
页码:113 / 121
页数:9
相关论文
共 28 条
[1]  
Becker R, 1935, ANN PHYS-BERLIN, V24, P719
[2]   INVESTIGATION OF THE OXYGEN-RELATED LATTICE-DEFECTS IN CZOCHRALSKI SILICON BY MEANS OF ELECTRON-MICROSCOPY TECHNIQUES [J].
BENDER, H .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 86 (01) :245-261
[3]  
BERGHOLZ W, 1987, 7TH P INT SCH DEF CR, P196
[4]   EARLY STAGES OF OXYGEN SEGREGATION AND PRECIPITATION IN SILICON [J].
BOURRET, A ;
THIBAULTDESSEAUX, J ;
SEIDMAN, DN .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) :825-836
[5]   THE DETERMINATION OF THE ELASTIC FIELD OF AN ELLIPSOIDAL INCLUSION, AND RELATED PROBLEMS [J].
ESHELBY, JD .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 241 (1226) :376-396
[7]   HOMOGENEOUS NUCLEATION AND GROWTH OF DROPLETS IN VAPOURS [J].
FEDER, J ;
RUSSELL, KC ;
LOTHE, J ;
POUND, GM .
ADVANCES IN PHYSICS, 1966, 15 (57) :111-&
[8]   PRECIPITATION OF OXYGEN IN SILICON [J].
FREELAND, PE ;
JACKSON, KA ;
LOWE, CW ;
PATEL, JR .
APPLIED PHYSICS LETTERS, 1977, 30 (01) :31-33
[9]  
FRENKEL J, 1946, KINETIC THEORY LIQUI, pCH7