EFFECT OF DONOR CONCENTRATION ON SEVERAL PROPERTIES OF GALLIUM-ARSENIDE PHOSPHIDE

被引：6

作者：

OGIRIMA, M

KURATA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1972年 / 11卷 / 03期

关键词：

D O I：

10.1143/JJAP.11.331

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：331 / &

相关论文

共 19 条

[1] DIERSCHKE EG, 1969, 51171 US ARM RES OFF
[2] ROOM TEMPERATURE GREEN ELECTROLUMINESCENT DIODES PREPARED FROM N-TYPE VAPOUR GROWN EPITAXIAL GALLIUM PHOSPHIDE
EPSTEIN, AS
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (06) : 485 - &
[3] ELECTROLUMINESCENCE OF DIFFUSED GAAS1-XPX DIODES WITH LOW DONOR CONCENTRATIONS
HERZOG, AH
GROVES, WO
CRAFORD, MG
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) : 1830 - &
[4] QUANTUM EFFICIENCY OF GAAS ELECTROLUMINESCENT DIODES
HERZOG, AH
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (07) : 721 - +
[5] KU SM, 1963, SOLID STATE ELECTRON, V6, P505
[6] OPTIMIZATION OF ELECTROLUMINESCENT EFFICIENCIES FOR VAPOR-GROWN GAAS 1-XPX DIODES
NUESE, CJ
TIETJEN, JJ
GANNON, JJ
GOSSENBERGER, HF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) : 248 - +
[7] NUESE CJ, 1968, T METALL SOC AIME, V242, P400
[8] EPITAXIAL GROWTH OF GAAS1-XPX
OGIRIMA, M
KURATA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (10) : 1474 - &
[9] ZINC DIFFUSION INTO GAAS1-XPX BY GA-P-ZN TERNARY ALLOY SOURCE
ONO, Y
KURATA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (01) : 55 - &
[10] ELECTROLUMINESCENCE AND LASING ACTION IN GAASXP1-X
PILKUHN, M
RUPPRECHT, H
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (3P1) : 684 - &