ELECTRICAL-PROPERTIES OF THE SINX/INP INTERFACE PASSIVATED USING H2S

被引：25

作者：

KAPILA, A

SI, X

MALHOTRA, V

机构：

[1] Department of Electrical Engineering, University of Hawaii at Manoa, Holmes Hall, Honolulu

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 18期

关键词：

D O I：

10.1063/1.109434

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Passivation of the electronic defect states at the SiN(x)/InP interface has been achieved using gaseous H2S treatments of the InP surface. Al/SiN(x)/InP capacitors, fabricated by depositing silicon nitride films on the H2S-treated InP, exhibit good capacitance-voltage (C-V) characteristics. The SiN(x) layer is deposited at 200-degrees-C using an electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) technique. A minimum trap density of 3.5 X 10(11) cm-2 eV-1 is estimated using the high-frequency C-V characteristics. These devices appear to be more uniform and reproducible than ammonium/phosphorous polysulfide-passivated SiN(x)/InP interfaces.

引用

页码：2259 / 2261

页数：3

共 15 条

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