CHARGE-TRANSFER AND ELECTRONIC SCREENING AT THE AS/SI(100)-(2X1) AND AS/SI(111)-(1X1) SURFACES

被引:17
作者
COLE, RJ
EVANS, JA
WEIGHTMAN, P
MATTHEW, JAD
WOOLF, DA
WESTWOOD, DI
机构
[1] UNIV LIVERPOOL,SURFACE SCI RES CTR,LIVERPOOL L69 3BX,ENGLAND
[2] UNIV YORK,DEPT PHYS,YORK YO1 5DD,N YORKSHIRE,ENGLAND
[3] UNIV COLL WALES ABERYSTWYTH,DEPT PHYS,ABERYSTWYTH SY23 1NE,DYFED,WALES
来源
PHYSICAL REVIEW B | 1994年 / 49卷 / 11期
关键词
D O I
10.1103/PhysRevB.49.7528
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
As and Si Auger parameters for As terminated Si(100) and Si(111) surfaces have been measured and analyzed in terms of ground state charge transfer across the interfaces and core hole screening efficiency. Our results indicate a small electron transfer (approximately 0.05 electrons per atom) from Si to As at these interfaces. We find that for the As/Si(100) system core holes in atoms in the interface layers are much better screened than in bulk Si, due to high polarizability in the As-As bond. The screening is more bulklike at the As terminated Si(111) surface, consistent with the unreconstructed ''bulk-terminated'' surface structure of this system.
引用
收藏
页码:7528 / 7534
页数:7
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