PHOTOLUMINESCENCE STUDY OF EXCESS CARRIER SPILLOVER IN 1.3-MU-M WAVELENGTH STRAINED MULTI-QUANTUM-WELL INGAASP/INP LASER STRUCTURES

被引：8

作者：

GARBUZOV, D ^{[1
]}

SHIAU, GJ ^{[1
]}

BULOVIC, V ^{[1
]}

BORODITSKY, M ^{[1
]}

CHAO, CP ^{[1
]}

FORREST, SR ^{[1
]}

机构：

[1] PRINCETON UNIV,PRINCETON MAT INST,PRINCETON,NJ 08544

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 11期

关键词：

D O I：

10.1063/1.113224

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence of 1.3 μm wavelength strained multiple quantum well InGaAsP/InP laser structures has been used to understand the excess carrier redistribution between the quantum well and waveguide regions at a high level of excitation. A model is developed to describe the experimental results. The model suggests that space charge barriers play a significant role in the electron confinement in quantum wells at the high excitation range typical of laser diode operation.© 1995 American Institute of Physics.

引用

页码：1307 / 1309

页数：3

共 15 条

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