C-V INDEX OF HYPERABRUPT P-N-JUNCTIONS

被引：4

作者：

GUPTA, AK

TYAGI, MS

机构：

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 03期

关键词：

D O I：

10.1016/0038-1101(78)90019-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：507 / 511

页数：5

共 11 条

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GUPTA, AK ;

TYAGI, MS .

SOLID-STATE ELECTRONICS, 1976, 19 (04) :342-344

[2] DESIGN CONSIDERATIONS OF HYPERABRUPT VARACTOR DIODES [J].

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PONCZAK, S ;

OLMSTEAD, JA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (02) :109-+

[3] SILICON VARIABLE CAPACITANCE DIODES WITH HIGH VOLTAGE SENSITIVITY BY LOW TEMPERATURE EPITAXIAL GROWTH [J].

NAKANUMA, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (07) :578-+

[4] VOLTAGE VARIABLE CAPACITOR TUNING - A REVIEW [J].

NORWOOD, MH .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (05) :788-+

[5]

RAO P, 1972, ECONOMETRICS

[6]

SHIMIZU A, 1961, IRE T ELECTRON DEV, VED8, P370

[7]

SHINODA M, 1964, ELECTRONICS COMM JAP, V47, P66

[8] A DESIGN METHOD FOR VARIABLE-CAPACITANCE DIODES WITH AN M-TH POWER CHARACTERISTIC FOR A WIDE VOLTAGE RANGE [J].

SUKEGAWA, T ;

SAKURAI, T ;

NISHIZAWA, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (12) :988-+

[9]

TYAGI MS, 1977, INDIAN J PURE AP PHY, V15, P152

[10]

TYAGI MS, 1977, IEEE T ELECTRON DEV

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