FORMATION OF PROBE MICROSCOPE TIPS IN SILICON BY FOCUSED ION-BEAMS

被引：15

作者：

VASILE, MJ ^{[1
]}

BIDDICK, C ^{[1
]}

HUGGINS, H ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 05期

关键词：

D O I：

10.1063/1.111108

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A combination of lithographic patterning, liquid phase anisotropic etching, and focused ion beam milling has been used to prototype the production of scanning probe microscope tips-in single-crystal silicon. The results show that tips with geometry equivalent to those made with iridium or tungsten wires can be made without the deleterious random effects of grain structure. The tips subtend a maximum cone angle of 20 degrees and protrude 3.5 mu m above the surface of a Si pyramid bounded by (111) planes.

引用

收藏

页码：575 / 576

页数：2

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