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SPECIFIC CONTACT RESISTANCE OF NI-AU-GE-NGAP SYSTEM
被引:4
作者
:
LEI, TF
论文数:
0
引用数:
0
h-index:
0
机构:
NATL TAIWAN UNIV,TJING LING IND RES INST,TAIPEI,TAIWAN
NATL TAIWAN UNIV,TJING LING IND RES INST,TAIPEI,TAIWAN
LEI, TF
[
1
]
LEE, CL
论文数:
0
引用数:
0
h-index:
0
机构:
NATL TAIWAN UNIV,TJING LING IND RES INST,TAIPEI,TAIWAN
NATL TAIWAN UNIV,TJING LING IND RES INST,TAIPEI,TAIWAN
LEE, CL
[
1
]
CHANG, CY
论文数:
0
引用数:
0
h-index:
0
机构:
NATL TAIWAN UNIV,TJING LING IND RES INST,TAIPEI,TAIWAN
NATL TAIWAN UNIV,TJING LING IND RES INST,TAIPEI,TAIWAN
CHANG, CY
[
1
]
机构
:
[1]
NATL TAIWAN UNIV,TJING LING IND RES INST,TAIPEI,TAIWAN
来源
:
SOLID-STATE ELECTRONICS
|
1978年
/ 21卷
/ 02期
关键词
:
D O I
:
10.1016/0038-1101(78)90268-X
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:385 / 391
页数:7
相关论文
共 19 条
[1]
PROPERTIES OF N-TYPE GE-DOPED EPITAXIAL GAAS LAYERS GROWN FROM AU-RICH MELTS
ANDREWS, AM
论文数:
0
引用数:
0
h-index:
0
ANDREWS, AM
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
HOLONYAK, N
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(06)
: 601
-
&
[2]
OPTICAL-COUPLING EFFICIENCY OF GAP-N GREEN-LIGHT-EMITTING DIODES
BACHRACH, RZ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BACHRACH, RZ
JOYCE, WB
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
JOYCE, WB
DIXON, RW
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
DIXON, RW
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(12)
: 5458
-
5462
[3]
DIELECTRIC DISPERSION AND PHONON LINE SHAPE IN GALLIUM PHOSPHIDE
BARKER, AS
论文数:
0
引用数:
0
h-index:
0
BARKER, AS
[J].
PHYSICAL REVIEW,
1968,
165
(03):
: 917
-
&
[4]
GALLIUM MIGRATION THROUGH CONTACT METALLIZATIONS ON GAP
BRANTLEY, WA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BRANTLEY, WA
SCHWARTZ, B
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SCHWARTZ, B
KERAMIDAS, VG
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
KERAMIDAS, VG
KAMMLOTT, GW
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
KAMMLOTT, GW
SINHA, AK
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SINHA, AK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(03)
: 434
-
435
[5]
SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS
CHANG, CY
论文数:
0
引用数:
0
h-index:
0
CHANG, CY
FANG, YK
论文数:
0
引用数:
0
h-index:
0
FANG, YK
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(07)
: 541
-
&
[6]
CARRIER TRANSPORT ACROSS METAL-SEMICONDUCTOR BARRIERS
CHANG, CY
论文数:
0
引用数:
0
h-index:
0
CHANG, CY
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
[J].
SOLID-STATE ELECTRONICS,
1970,
13
(06)
: 727
-
+
[7]
NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Materials Science, University of Southern California, Los Angeles
CROWELL, CR
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Materials Science, University of Southern California, Los Angeles
RIDEOUT, VL
[J].
SOLID-STATE ELECTRONICS,
1969,
12
(02)
: 89
-
&
[8]
RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
CROWELL, CR
[J].
SOLID-STATE ELECTRONICS,
1965,
8
(04)
: 395
-
&
[9]
ANISOTROPY OF EFFECTIVE ELECTRON MASS IN GALLIUM PHOSPHIDE
KASAMI, A
论文数:
0
引用数:
0
h-index:
0
KASAMI, A
[J].
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN,
1968,
24
(03)
: 551
-
&
[10]
MOSS TS, 1962, P INT C PHYS SEMICON
←
1
2
→
共 19 条
[1]
PROPERTIES OF N-TYPE GE-DOPED EPITAXIAL GAAS LAYERS GROWN FROM AU-RICH MELTS
ANDREWS, AM
论文数:
0
引用数:
0
h-index:
0
ANDREWS, AM
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
HOLONYAK, N
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(06)
: 601
-
&
[2]
OPTICAL-COUPLING EFFICIENCY OF GAP-N GREEN-LIGHT-EMITTING DIODES
BACHRACH, RZ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BACHRACH, RZ
JOYCE, WB
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
JOYCE, WB
DIXON, RW
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
DIXON, RW
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(12)
: 5458
-
5462
[3]
DIELECTRIC DISPERSION AND PHONON LINE SHAPE IN GALLIUM PHOSPHIDE
BARKER, AS
论文数:
0
引用数:
0
h-index:
0
BARKER, AS
[J].
PHYSICAL REVIEW,
1968,
165
(03):
: 917
-
&
[4]
GALLIUM MIGRATION THROUGH CONTACT METALLIZATIONS ON GAP
BRANTLEY, WA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BRANTLEY, WA
SCHWARTZ, B
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SCHWARTZ, B
KERAMIDAS, VG
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
KERAMIDAS, VG
KAMMLOTT, GW
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
KAMMLOTT, GW
SINHA, AK
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SINHA, AK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(03)
: 434
-
435
[5]
SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS
CHANG, CY
论文数:
0
引用数:
0
h-index:
0
CHANG, CY
FANG, YK
论文数:
0
引用数:
0
h-index:
0
FANG, YK
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(07)
: 541
-
&
[6]
CARRIER TRANSPORT ACROSS METAL-SEMICONDUCTOR BARRIERS
CHANG, CY
论文数:
0
引用数:
0
h-index:
0
CHANG, CY
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
[J].
SOLID-STATE ELECTRONICS,
1970,
13
(06)
: 727
-
+
[7]
NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Materials Science, University of Southern California, Los Angeles
CROWELL, CR
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Materials Science, University of Southern California, Los Angeles
RIDEOUT, VL
[J].
SOLID-STATE ELECTRONICS,
1969,
12
(02)
: 89
-
&
[8]
RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
CROWELL, CR
[J].
SOLID-STATE ELECTRONICS,
1965,
8
(04)
: 395
-
&
[9]
ANISOTROPY OF EFFECTIVE ELECTRON MASS IN GALLIUM PHOSPHIDE
KASAMI, A
论文数:
0
引用数:
0
h-index:
0
KASAMI, A
[J].
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN,
1968,
24
(03)
: 551
-
&
[10]
MOSS TS, 1962, P INT C PHYS SEMICON
←
1
2
→