ELEMENTARY PROCESSES IN THE MBE GROWTH OF GAAS

被引：21

作者：

JOYCE, BA ^{[1
]}

SHITARA, T ^{[1
]}

YOSHINAGA, A ^{[1
]}

VVEDENSKY, DD ^{[1
]}

NEAVE, JH ^{[1
]}

ZHANG, J ^{[1
]}

机构：

[1] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,BLACKETT LAB,LONDON SW7 2BZ,ENGLAND

来源：

APPLIED SURFACE SCIENCE | 1992年 / 60-1卷

关键词：

D O I：

10.1016/0169-4332(92)90417-V

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The application of surface science and computer simulation techniques to studies of surface reaction kinetics and growth dynamics has enabled significant advances to be made in our understanding of thin film growth by molecular beam epitaxy (MBE). In this paper we will discuss surface migration and incorporation processes of adatoms during the growth of GaAs from elemental sources and also surface relaxation which follows the termination of growth. Experimental measurements have been based on the application of reflection high-energy electron diffraction (RHEED) measurements to growth on vicinal surface for adatom migration studies and singular surfaces for relaxation effects. These have been complemented by theoretical treatments using principally Monte Carlo simulations and nucleation kinetics.

引用

页码：200 / 209

页数：10

共 23 条

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