PERIODICITY OF IMPURITY SEGREGATION EFFECTS IN OXYGEN BOMBARDED SILICON

被引:22
作者
WITTMAACK, K
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D O I
10.1016/S0168-583X(87)80096-4
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
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页码:484 / 487
页数:4
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共 15 条
[1]  
BENNINGHOVEN A, 1986, SECONDARY ION MASS S, V5
[2]  
BIERSACK JP, 1986, 7TH P INT C ION BEAM
[3]  
BIERSACK JP, 1986, NUCL INSTR METH B, V15
[4]   PROFILE DISTORTION IN SIMS [J].
BOUDEWIJN, PR ;
AKERBOOM, HWP ;
KEMPENERS, MNC .
SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, 1984, 39 (12) :1567-1571
[5]  
DELINE VR, 1986, SECONDARY ION MASS S, P299
[6]  
LITTLEWOOD SD, 1986, SECONDARY ION MASS S, P310
[7]   RELATION BETWEEN AN ATOMIC ELECTRONEGATIVITY SCALE AND WORK FUNCTION [J].
MICHAELSON, HB .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1978, 22 (01) :72-80
[9]  
SCHULTE F, 1986, SECONDARY ION MASS S, P285
[10]   OXYGEN INDUCED BROADENING EFFECTS STUDIED BY RBS AND SIMS [J].
VANDERVORST, W ;
SHEPHERD, FR ;
SWANSON, ML ;
PLATTNER, HH ;
WESTCOTT, OM ;
MITCHELL, IV .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6) :201-205