OXYGEN INDUCED BROADENING EFFECTS STUDIED BY RBS AND SIMS

被引：27

作者：

VANDERVORST, W

SHEPHERD, FR

SWANSON, ML

PLATTNER, HH

WESTCOTT, OM

MITCHELL, IV

机构：

[1] ATOM ENERGY CANADA LTD,CHALK RIVER KOJ 130,ONTARIO,CANADA

[2] BELL NO RES,OTTAWA K1Y 4H7,ONTARIO,CANADA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1986年 / 15卷 / 1-6期

关键词：

D O I：

10.1016/0168-583X(86)90285-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：201 / 205

页数：5

共 19 条

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[6] ASSESSMENT OF PROFILE BROADENING DURING SPUTTERING
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[7] A SIMS-XPS STUDY ON SILICON AND GERMANIUM UNDER O-2+ BOMBARDMENT
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[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6) : 173 - 175
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[J]. APPLICATIONS OF SURFACE SCIENCE, 1980, 5 (03): : 221 - 242
[9] TEMPERATURE-DEPENDENCE OF PROFILE TAILING AND SEGREGATION IN SIMS ANALYSIS OF ARSENIC IN SI AND SIO2 WITH OXYGEN PRIMARY IONS
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[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6) : 198 - 200
[10] SCHULTE F, 1985, OCT SIMS 5 WASH

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