EARLY STAGE OF SILICON OXIDATION STUDIED BY INSITU X-RAY PHOTOELECTRON-SPECTROSCOPY

被引：17

作者：

TAKAKURA, M

OGURA, T

HAYASHI, T

HIROSE, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 11期

关键词：

D O I：

10.1143/JJAP.27.L2213

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L2213 / L2215

页数：3

共 12 条

[1]

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