MASS-SPECTROMETRIC ANALYSIS DURING VAPOR-DEPOSITION OF AMORPHOUS SILICON

被引：6

作者：

MELL, H ^{[1
]}

BRODSKY, MH ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

THIN SOLID FILMS | 1977年 / 46卷 / 03期

关键词：

D O I：

10.1016/0040-6090(77)90186-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：299 / 305

页数：7

共 17 条

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[6] MASS-SPECTRA ANALYSES OF IMPURITIES AND ION CLUSTERS IN AMORPHOUS AND CRYSTALLINE SILICON FILMS [J].

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[7] OBSERVATIONS ON BAYARD-ALPERT ION GAUGE SENSITIVITIES TO VARIOUS GASES [J].

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[8] SIMULATION OF STRUCTURAL ANISOTROPY AND VOID FORMATION IN AMORPHOUS THIN-FILMS [J].

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