DEGRADATION OF GATE OXIDE INTEGRITY BY METAL IMPURITIES

被引：50

作者：

HIRAMOTO, K

SANO, M

SADAMITSU, S

FUJINO, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 12期

关键词：

D O I：

10.1143/JJAP.28.L2109

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L2109 / L2111

页数：3

共 7 条

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[5] TEM OBSERVATION OF DEFECTS INDUCED BY NI CONTAMINATION ON A SI(100) SURFACE [J].

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[6]

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[7]

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