LOCAL-MODE AND DEFECT-MODE INFRARED-ABSORPTION OF CARBON IONS IMPLANTED IN SILICON

被引：4

作者：

VAIDYANATHAN, KV

机构：

[1] UNIV WATERLOO, DEPT ELECT ENGN, WATERLOO, ONTARIO, CANADA

[2] CHALK RIVER NUCL LABS, CHALK RIVER, ONTARIO, CANADA

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 02期

关键词：

D O I：

10.1063/1.1662228

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：583 / 586

页数：4

共 12 条

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JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (06) :1493-&

[9] INFRA-RED ABSORPTION DUE TO LOCALIZED MODES OF VIBRATION OF IMPURITY COMPLEXES IN IONIC AND SEMICONDUCTOR CRYSTALS [J].

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[10] LOCALIZED MODES AND DIVACANCY ABSORPTION IN OXYGEN ION IMPLANTED SI [J].

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