IMPURITY PHOTOMAGNETOELECTRIC EFFECT - APPLICATION TO SEMI-INSULATING GAAS

被引：15

作者：

LOOK, DC

机构：

来源：

PHYSICAL REVIEW B | 1977年 / 16卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.16.5460

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5460 / 5465

页数：6

共 15 条

[1]

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FERRARA, M ;

MINAFRA, A ;

TANTALO, P .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) :5000-5003

[3] CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV [J].

CASEY, HC ;

SELL, DD ;

WECHT, KW .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :250-257

[4] MEASUREMENT OF HIGH-RESISTIVITY SEMICONDUCTORS USING VANDERPAUW METHOD [J].

HEMENGER, PM .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1973, 44 (06) :698-700

[5] PHOTOCONDUCTIVITY IN SEMI-INSULATING GALLIUM ARSENIDE [J].

HOLEMAN, BR ;

HILSUM, C .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 22 :19-24

[6]

IPPOLITOVA GK, 1975, SOV PHYS SEMICOND+, V9, P864

[7] INVESTIGATION OF RECOMBINATION AND TRAPPING PROCESSES OF PHOTOINJECTED CARRIERS IN SEMI-INSULATING CR-DOPED GAAS USING PME AND PC METHODS [J].

LI, SS ;

HUANG, CI .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1757-&

[8]

LIN AL, 1976, J APPL PHYS, V47, P1859, DOI 10.1063/1.322905

[9] MIXED CONDUCTION IN CR-DOPED GAAS [J].

LOOK, DC .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (12) :1311-1315

[10]

LOOK DC, UNPUBLISHED

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