ABNORMAL-GLOW-DISCHARGE DEPOSITION OF TUNGSTEN

被引:1
作者
GREENBERG, KE
机构
关键词
D O I
10.1063/1.97966
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1050 / 1052
页数:3
相关论文
共 11 条
[1]   SUPERCONDUCTIVITY IN BETA-TUNGSTEN FILMS [J].
BASAVAIAH, S ;
POLLACK, SR .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) :5548-+
[2]  
BROADBENT EK, 1985, SOLID STATE TECHNOL, V28, P51
[3]   SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN [J].
BROADBENT, EK ;
RAMILLER, CL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (06) :1427-1433
[4]   INFLUENCE OF LOW-ENERGY ELECTRON-IRRADIATION ON THE ADHESION OF GOLD-FILMS ON A SILICON SUBSTRATE [J].
DALLAPORTA, H ;
CROS, A .
APPLIED PHYSICS LETTERS, 1986, 48 (20) :1357-1359
[5]   ION ENERGIES AT CATHODE OF A GLOW DISCHARGE [J].
DAVIS, WD ;
VANDERSLICE, TA .
PHYSICAL REVIEW, 1963, 131 (01) :219-&
[6]   ION-BEAM-ENHANCED ADHESION IN THE ELECTRONIC STOPPING REGION [J].
GRIFFITH, JE ;
QIU, Y ;
TOMBRELLO, TA .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 198 (2-3) :607-609
[7]   RESISTIVITY, GRAIN-SIZE, AND IMPURITY EFFECTS IN CHEMICALLY VAPOR-DEPOSITED TUNGSTEN FILMS [J].
LEARN, AJ ;
FOSTER, DW .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (05) :2001-2007
[8]   ENHANCEMENT OF THIN METALLIC FILM ADHESION FOLLOWING VACUUM ULTRAVIOLET-IRRADIATION [J].
MITCHELL, IV ;
NYBERG, G ;
ELLIMAN, RG .
APPLIED PHYSICS LETTERS, 1984, 45 (02) :137-139
[9]  
PAULEAU Y, 1985, J ELECTROCHEM SOC, V132, P2780
[10]   PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF BETA-TUNGSTEN, A METASTABLE PHASE [J].
TANG, CC ;
HESS, DW .
APPLIED PHYSICS LETTERS, 1984, 45 (06) :633-635