SOME PROPERTIES OF ELECTRON BEAM EVAPORATED SI3N4 FILMS

被引：2

作者：

ELLIOTT, E

TOMLINSO.RD

HAMPSHIR.MJ

CALDERWO.JH

机构：

[1] Department of Electrical Engineering, University of Salford, Salford 5, Lancashire

来源：

THIN SOLID FILMS | 1969年 / 3卷 / 06期

关键词：

D O I：

10.1016/0040-6090(69)90068-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：R47 / &

共 7 条

[1] ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION [J].

BROWN, GA ;

ROBINETT.WC ;

CARLSON, HG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) :948-&

[2] ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON [J].

DEAL, BE ;

FLEMING, PJ ;

CASTRO, PL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) :300-&

[3] EVIDENCE OF HOLE INJECTION AND TRAPPING IN SILICON NITRIDE FILMS PREPARED BY REACTIVE SPUTTERING [J].

HU, SM ;

KERR, DR ;

GREGOR, LV .

APPLIED PHYSICS LETTERS, 1967, 10 (03) :97-&

[4]

JARUS AR, 1967, J VAC SCI TECHNOL, V4, P37

[5]

Kendall E. J. M., 1968, British Journal of Applied Physics (Journal of Physics D), V1, P1409

[6] OPTICAL THICKNESS MEASUREMENT OF SIO2-SI3N4 FILMS ON SILICON [J].

REIZMAN, F ;

VANGELDE.W .

SOLID-STATE ELECTRONICS, 1967, 10 (07) :625-&

[7] CURRENT TRANSPORT AND MAXIMUM DIELECTRIC STRENGTH OF SILICON NITRIDE FILMS [J].

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) :2951-+

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