ON THE DOPING EFFICIENCY OF NITROGEN IN HYDROGENATED AMORPHOUS-GERMANIUM

被引:17
作者
CHAMBOULEYRON, I
ZANATTA, AR
机构
[1] Instituto de Física, Universidade Estadual de Campinas, UNICAMP, Campinas, S. P., 13081
关键词
D O I
10.1063/1.108818
中图分类号
O59 [应用物理学];
学科分类号
摘要
This letter reports on the doping efficiency of nitrogen in a-Ge:H films of electronic quality. It has been found that nitrogen is an effective dopant in the a-Ge:H network, its doping efficiency being similar to the one corresponding to phosphorus in a-Si:H. The concentration of active nitrogen atoms decreases with impurity content following a square root dependence on total nitrogen. This behavior is similar to the one determined for column V dopants in a-Si:H films of electronic quality.
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页码:58 / 60
页数:3
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