INTERPRETATION OF THE TEMPERATURE-DEPENDENCE OF THE LUMINESCENCE INTENSITY, LIFETIME, AND DECAY PROFILES IN POROUS SI

被引:56
作者
SUEMOTO, T [1 ]
TANAKA, K [1 ]
NAKAJIMA, A [1 ]
机构
[1] FUJITSU LABS LTD, ATSUGI, KANAGAWA 24301, JAPAN
关键词
D O I
10.1103/PhysRevB.49.11005
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The temperature dependences of the luminescence intensity, lifetime, and decay profiles for porous Si are studied from 5 to 271 K. The radiative decay rates were determined from the tails of the decay curves and found to have an activation-type temperature dependence above 10 K. To describe the non-radiative process we propose a model in which we assume a tunneling and a thermally activated escape of the photoexcited carriers through barriers with a Gaussian distribution in height. The temperature dependence of intensity, lifetime, and nonexponential decay profiles are successfully interpreted in terms of this model.
引用
收藏
页码:11005 / 11009
页数:5
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