INTERPRETATION OF THE TEMPERATURE-DEPENDENCE OF THE LUMINESCENCE INTENSITY, LIFETIME, AND DECAY PROFILES IN POROUS SI

被引：56

作者：

SUEMOTO, T ^{[1
]}

TANAKA, K ^{[1
]}

NAKAJIMA, A ^{[1
]}

机构：

[1] FUJITSU LABS LTD, ATSUGI, KANAGAWA 24301, JAPAN

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.49.11005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The temperature dependences of the luminescence intensity, lifetime, and decay profiles for porous Si are studied from 5 to 271 K. The radiative decay rates were determined from the tails of the decay curves and found to have an activation-type temperature dependence above 10 K. To describe the non-radiative process we propose a model in which we assume a tunneling and a thermally activated escape of the photoexcited carriers through barriers with a Gaussian distribution in height. The temperature dependence of intensity, lifetime, and nonexponential decay profiles are successfully interpreted in terms of this model.

引用

页码：11005 / 11009

页数：5

共 15 条

[11] EFFECTS OF THERMAL ANNEALING ON POROUS SILICON PHOTOLUMINESCENCE DYNAMICS [J].