AMORPHOUS-SILICON AS A RESIST MATERIAL

被引：1

作者：

GUPTA, PK ^{[1
]}

CHOPRA, KL ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,DEPT PHYS,THIN FILM & SOLID STATE TECHNOL LAB,NEW DELHI 110016,INDIA

来源：

关键词：

D O I：

10.1109/55.20399

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：17 / 19

页数：3

共 9 条

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[2] CLIMENT A, 1984, THIN FILMS INTERFACE, V2, P613
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HECHTL, EO
TSURUSHIMA, T
[J]. APPLIED PHYSICS LETTERS, 1969, 15 (04) : 117 - +
[4] GIONOLA UF, 1957, J APPL PHYS, V28, P868
[5] OBSERVATION OF ION BOMBARDMENT DAMAGE IN SILICON
MAZEY, DJ
NELSON, RS
BARNES, RS
[J]. PHILOSOPHICAL MAGAZINE, 1968, 17 (150): : 1145 - &
[6] MORIWAKI K, 1981, JAPAN J APPL PHYS, V20, P1505
[7] HYDROGENATION AND DEHYDROGENATION OF AMORPHOUS AND CRYSTALLINE SILICON
PANKOVE, JI
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[J]. APPLIED PHYSICS LETTERS, 1978, 32 (07) : 439 - 441
[8] LASER-BEAM ANNEALING OF DISCHARGE-PRODUCED AMORPHOUS SILICON
STAEBLER, DL
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3648 - 3652
[9] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI
STAEBLER, DL
WRONSKI, CR
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 292 - 294