EFFECT OF RESIDUAL-GAS PRESSURE ON THE EPITAXIAL-GROWTH OF VACUUM-DEPOSITED CHROMIUM ON CU(111) SUBSTRATES

Transmission electron microscopy, electron diffraction and Auger electron spectroscopy were used to study the effect of vacuum conditions on the epitaxial growth of vacuum-deposited chromium films of thicknesses less than 40 nm on Cu left brace 111 right brace substrates. The chromium films were condensed (i) in ultrahigh vacuum at 10** minus **9 Torr, (ii) at total pressures of 10** minus **5, 10** minus **6 and 5 multiplied by 10** minus **8 Torr and (iii) at oxygen partial pressures of 5 multiplied by 10** minus **9, 10** minus **7 and 10** minus **6 Torr. The presence of contaminants during the chromium evaporation suppressed the formation of Kurdjumov-Sachs orientations. A low oxygen partial pressure was most effective in altering the orientation and morphology of the deposits.