AN ENGINEERING MODEL FOR SHORT-CHANNEL MOS DEVICES

被引：99

作者：

TOH, KY ^{[1
]}

KO, PK ^{[1
]}

MEYER, RG ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1988年 / 23卷 / 04期

关键词：

D O I：

10.1109/4.346

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：950 / 958

页数：9

相关论文

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