DEPOSITION AND CHARACTERIZATION OF THIN SIOX FILMS

被引：14

作者：

PRIESTLEY, EB ^{[1
]}

CALL, PJ ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

THIN SOLID FILMS | 1980年 / 69卷 / 01期

关键词：

D O I：

10.1016/0040-6090(80)90202-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：39 / 52

页数：14

共 19 条

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[2] HYDRIDES AND HYDROXYLS IN THIN SILICON DIOXIDE FILMS [J].

BECKMANN, KH ;

HARRICK, NJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) :614-&

[3]

BELL AT, 1976, PLASMA CHEM

[4] PROPERTIES OF SIXOYNZ FILMS ON SI [J].

BROWN, DM ;

GRAY, PV ;

HEUMANN, FK ;

PHILIPP, HR ;

TAFT, EA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) :311-&

[5]

Ing Jr S. W., 1965, J ELECTROCHEM SOC, V112, P285

[6]

JOYCE RJ, 1967, THIN SOLID FILMS, V1, P481

[7]

KAELBLE DH, 1970, PHYSICAL CHEM ADHESI, P149

[8]

KERN W, 1973, RCA REV, V34, P655

[9]

KERN W, 1967, RCA REV, V28, P153

[10] DEPOSITION OF THIN-FILMS BY DECOMPOSITION OF TETRA-ETHOXY SILANE IN A RADIO-FREQUENCY GLOW-DISCHARGE [J].

MUKHERJEE, SP ;

EVANS, PE .

THIN SOLID FILMS, 1972, 14 (01) :105-118

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