ANALYSIS OF SI SCHOTTKY-BARRIER CHARACTERISTICS BASED ON A NEW INTERFACIAL LAYER MODEL

被引：14

作者：

IKOMA, H ^{[1
]}

MAEDA, K ^{[1
]}

机构：

[1] SCI UNIV TOKYO,FAC IND SCI & TECHNOL,NODA,CHIBA 278,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 01期

关键词：

SCHOTTKY BARRIER; SI SINGLE CRYSTAL; INTERFACE STATES; IV CHARACTERISTICS; ANALYSIS;

D O I：

10.1143/JJAP.30.19

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Current-voltage characteristics of Si Schottky barrier diodes are measured at various temperatures between 300 K and 420 K in order to investigate an applicability of a newly proposed interfacial layer model for Schottky barrier. Experimental data are analyzed on a basis of this model. Analyzed results are mostly found to be similar to those of a-Si:H and can be interpreted by the present model. The new interfacial layer model is then concluded to well represent actual Schottky barriers for both amorphous and crystalline semiconductors.

引用

页码：19 / 26

页数：8

共 12 条

[1] REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES [J].

ANDREWS, JM ;

LEPSELTER, MP .

SOLID-STATE ELECTRONICS, 1970, 13 (07) :1011-+

[2] STUDIES OF TUNNEL MOS DIODES .2. THERMAL EQUILIBRIUM CONSIDERATIONS [J].

CARD, HC ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1602-+

[3] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].

CARD, HC ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+

[4] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].

COWLEY, AM ;

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&

[5]

Grove A S, 1967, PHYS TECHNOLOGY SEMI

[6] EFFECT OF MERCURY CONTAMINATION ON WORK FUNCTION OF GOLD - (CONTACT POTENTIAL DIFFERENCE NEW VALUE FOR AU WORK FUNCTION 5.22+-3.05 EV E) [J].

HUBER, EE .

APPLIED PHYSICS LETTERS, 1966, 8 (07) :169-&

[7] NONIDEAL J-V CHARACTERISTICS AND INTERFACE STATES OF AN A-SI-H SCHOTTKY-BARRIER [J].

MAEDA, K ;

UMEZU, I ;

YOSHIMURA, T ;

IKOMA, H .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (06) :2858-2867

[8]

Rhoderick E.H., 1978, METAL SEMICONDUCTORS

[9] CONDUCTION MECHANISM IN SCHOTTKY DIODES [J].

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (10) :1920-+

[10] WORK FUNCTION OF GOLD - (5.28 +-002 CONTACT POTENTIAL DIFFERENCE METHOD VACUUM 10-10 TORR SURFACE CONTAMINATION ION VS HG PUMPS E) [J].

RIVIERE, JC .

APPLIED PHYSICS LETTERS, 1966, 8 (07) :172-&

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