SUBSTITUTIONALITY OF TE-RELATED AND SN-RELATED DX CENTERS IN ALXGA1-XAS

被引：5

作者：

YU, KM

KHACHATURYAN, K

WEBER, ER

LEE, HP

COLAS, EG

机构：

[1] UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720

[2] BELL COMMUN RES INC,RED BANK,NJ 07701

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.43.2462

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The lattice locations of Te and Sn atoms forming DX centers in Al(x)Ga(1-x)As were determined by particle-induced x-ray emission and ion-beam-channeling methods. The Te atoms were found to be in the As substitutional sites while the Sn atoms were in the Ga(Al) sites. No off-center displacement of Te and Sn larger than 0.14 angstrom from the substitutional sites was observed in either system.

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页码：2462 / 2465

页数：4

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