THE INFLUENCES OF TRAPS ON THE GENERATION-RECOMBINATION CURRENT IN SILICON DIODES

被引：11

作者：

LEE, K

NUSSBAUM, A

机构：

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 06期

关键词：

D O I：

10.1016/0038-1101(80)90051-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：655 / 660

页数：6

共 13 条

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[9] GENERATION-RECOMBINATION CHARACTERISTIC BEHAVIOR OF SILICON DIODES [J].

NUSSBAUM, A .

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[10]

NUSSBAUM A, 1962, SEMICONDUCTOR DEVICE

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