NEW FUNCTIONAL FIELD-EFFECT TRANSISTOR BASED ON WAVE-FUNCTION MODULATION IN DELTA-DOPED DOUBLE QUANTUM-WELLS

被引：13

作者：

OHNO, Y

TSUCHIYA, M

SAKAKI, H

机构：

[1] UNIV TOKYO,ADV SCI & TECHNOL RES CTR,MEGURO KU,TOKYO 106,JAPAN

[2] UNIV TOKYO,DEPT INFORMAT & COMMUN ENGN,BUNKYO KU,TOKYO 113,JAPAN

[3] JRDC,QUANTUM WAVE PROJECT,MEGURO KU,TOKYO 153,JAPAN

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 04期

关键词：

FIELD-EFFECT TRANSISTORS; TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19930252

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Novel field-effect transistor characteristics are demonstrated by using impurity-inserted double quantum wells. By controlling the resonant coupling with gate voltage, electron wavefunctions are delocalised or localised, resulting in the enhancement or suppression of ionised impurity scattering. Multifunctional performance including a large negative transconductance and frequency-multiplier action is realised.

引用

页码：375 / 376

页数：2

共 6 条

[1] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].