PHOTO-IONIZATION OF DEEP IMPURITY LEVELS IN SEMICONDUCTORS

[11] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J]. PHYSICAL REVIEW B, 1977, 15 (02): : 989 - 1016

[12] PHOTOIONIZATION CROSS-SECTIONS OF HOLES AT ZINC CENTERS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1259 - 1262

[13] SIMPLE ANALYTIC EXPRESSION FOR OPTICAL CROSS-SECTIONS ASSOCIATED WITH DEEP IMPURITY STATES IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (11): : L264 - L267

[14] PHOTOCAPACITANCE STUDIES OF OXYGEN DONOR IN GAP I OPTICAL CROSS-SECTIONS, ENERGY-LEVELS, AND CONCENTRATION [J]. PHYSICAL REVIEW B, 1973, 7 (06) : 2486 - 2499

[15] ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (09) : 299 - 302

[16] MOTION OF ELECTRONS AND HOLES IN PERTURBED PERIODIC FIELDS [J]. PHYSICAL REVIEW, 1955, 97 (04): : 869 - 883

[17] WAVE-NUMBER-DEPENDENT DIELECTRIC FUNCTION OF SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1962, 128 (05): : 2093 - +

[18] SCHIFF LI, 1958, QUANTUM MECHANICS, P404

[19] ISOLATED A+ STATES IN BORON DOPED SILICON UNDER HIGH COMPRESSIVE STRESS [J]. SOLID STATE COMMUNICATIONS, 1979, 30 (06) : 395 - 398

[20] QUANTUM DIELECTRIC THEORY OF ELECTRONEGATIVITY IN COVALENT SYSTEMS .I. ELECTRONIC DIELECTRIC CONSTANT [J]. PHYSICAL REVIEW, 1969, 182 (03): : 891 - +

[11] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J]. PHYSICAL REVIEW B, 1977, 15 (02): : 989 - 1016

[12] PHOTOIONIZATION CROSS-SECTIONS OF HOLES AT ZINC CENTERS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1259 - 1262

[13] SIMPLE ANALYTIC EXPRESSION FOR OPTICAL CROSS-SECTIONS ASSOCIATED WITH DEEP IMPURITY STATES IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (11): : L264 - L267

[14] PHOTOCAPACITANCE STUDIES OF OXYGEN DONOR IN GAP I OPTICAL CROSS-SECTIONS, ENERGY-LEVELS, AND CONCENTRATION [J]. PHYSICAL REVIEW B, 1973, 7 (06) : 2486 - 2499

[15] ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (09) : 299 - 302

[16] MOTION OF ELECTRONS AND HOLES IN PERTURBED PERIODIC FIELDS [J]. PHYSICAL REVIEW, 1955, 97 (04): : 869 - 883

[17] WAVE-NUMBER-DEPENDENT DIELECTRIC FUNCTION OF SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1962, 128 (05): : 2093 - +

[18] SCHIFF LI, 1958, QUANTUM MECHANICS, P404

[19] ISOLATED A+ STATES IN BORON DOPED SILICON UNDER HIGH COMPRESSIVE STRESS [J]. SOLID STATE COMMUNICATIONS, 1979, 30 (06) : 395 - 398

[20] QUANTUM DIELECTRIC THEORY OF ELECTRONEGATIVITY IN COVALENT SYSTEMS .I. ELECTRONIC DIELECTRIC CONSTANT [J]. PHYSICAL REVIEW, 1969, 182 (03): : 891 - +