THERMODYNAMICAL STUDY OF GAS-TRANSPORT IN THIN-FILM GROWTH - APPLICATION TO BISMUTH CHALCOGENIDES

被引：4

作者：

GARCIA, JC ^{[1
]}

BOYER, A ^{[1
]}

TEDENAC, JC ^{[1
]}

机构：

[1] UNIV MONTPELLIER SCI & TECH LANGUEDOC,CTR ELECTR MONTPELLIER,MONTPELLIER 5,FRANCE

来源：

METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE | 1991年 / 22卷 / 10期

关键词：

D O I：

10.1007/BF02665006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The authors have studied thermodynamic conditions for the vapor-phase deposition process in the hot wall epitaxy (HWE) and molecular beam techniques. It was applied to chalcogenides Bi2Te3 and Bi2Se3 which are the main components of thermoelectric devices. After a description of the chemical equilibria involved in the process equilibrium constant, the pressure of the components and the flux were calculated. By comparison with previously published experimental works concerning Bi2Te3 deposition, calculation results appear to be accurate.

引用

页码：2401 / 2405

页数：5

共 15 条

[1]

BARIN I, 1973, THERMOCHEMICAL PROPE, P706

[2]

BONCHEVAMLADENO.Z, 1966, NEORG MATER, V2, P1324

[3] INVESTIGATION OF VACUUM DEPOSITION OF BI2TE3 - BASED THERMOELECTRIC-MATERIALS [J].

BORKOWSKI, K ;

PRZYLUSKI, J .

MATERIALS RESEARCH BULLETIN, 1987, 22 (03) :381-387

[4]

BOYER A, 1990, COMMUNICATION

[5] GROWTH OF PBTE DOPING SUPERLATTICES BY HOT WALL EPITAXY [J].

CLEMENS, H .

JOURNAL OF CRYSTAL GROWTH, 1988, 88 (02) :236-240

[6]

GARCIA JC, 1990, THESIS U MONTPELLIER

[7]

Kelley K, 1960, US BUR MINES B, V584

[8] DESIGN CONSIDERATIONS FOR MOLECULAR-BEAM EPITAXY SYSTEMS [J].

LUSCHER, PE ;

COLLINS, DM .

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (1-2) :15-32

[9]

Maissel L.I., 1983, HDB THIN FILM TECHNO, P1

[10]

MANUEL O, 1969, T FARADAY SOC, V65, P3221

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