RF REACTIVE SPUTTERING OF INDIUM-TIN-OXIDE FILMS

被引：4

作者：

TVAROZEK, V

NOVOTNY, I

HARMAN, R

KOVAC, J

机构：

[1] Slovak Technical Univ, Bratislava, Czech, Slovak Technical Univ, Bratislava, Czech

来源：

VACUUM | 1986年 / 36卷 / 7-9期

关键词：

DIODE SPUTTERING - INDIUM-TIN OXIDE FILMS - RF REACTIVE SPUTTERING;

D O I：

10.1016/0042-207X(86)90231-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：479 / 482

页数：4

共 7 条

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CHOPRA, KL ;

MAJOR, S ;

PANDYA, DK .

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FAN, JCC .

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[3] HIGHLY CONDUCTIVE, TRANSPARENT FILMS OF SPUTTERED IN2-XSNXO3-Y [J].

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COOK, HD .

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[4] COMPOSITION CONTROL IN CONDUCTING OXIDE THIN-FILMS [J].

RIDGE, MI ;

HOWSON, RP .

THIN SOLID FILMS, 1982, 96 (02) :121-127

[5] PREPARATION AND CHARACTERIZATION OF RF SPUTTERED INDIUM TIN OXIDE-FILMS [J].

SREENIVAS, K ;

RAO, TS ;

MANSINGH, A ;

CHANDRA, S .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :384-392

[6] OPTICAL AND ELECTRICAL-PROPERTIES OF REACTIVELY DC MAGNETRON-SPUTTERED IN2O3-SN FILMS [J].

THEUWISSEN, AJP ;

DECLERCK, GJ .

THIN SOLID FILMS, 1984, 121 (02) :109-119

[7]

TVAROZEK V, 1984, Patent No. 234859

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