PHOTOLUMINESCENCE SPECTROSCOPY OF CDTE GROWN BY PHOTOASSISTED MBE

被引：22

作者：

GILES, NC ^{[1
]}

BOWERS, KA ^{[1
]}

HARPER, RL ^{[1
]}

HWANG, S ^{[1
]}

SCHETZINA, JF ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT PHYS,RALEIGH,NC 27695

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 101卷 / 1-4期

关键词：

15;

D O I：

10.1016/0022-0248(90)90938-H

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A study has been made of the photoluminescence (PL) properties of p-type CdTe: As and undoped n-type CdTe grown by the photoassisted molecular beam epitaxy (MBE) technique. PL studies have been performed over the temperature range from 1.6 to 300 K. Acceptor and donor ionization energies are determined from temperature dependence studies of (D0, h) and (e, A0) PL emissions. We find that the n-type behavior in the unintentionally doped films arises from two different donor levels, and is dependent on power density during film growth. In addition, the photoassisted MBE technique has allowed a lowering of substrate growth temperatures for both CdTe:As and undoped CdTe. High quality films with bright, sharp excitonic peaks can be grown at substrate temperatures as low as 125°C. © 1989.

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收藏

页码：67 / 72

页数：6

相关论文

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