MELTING PHENOMENA AND PULSED-LASER ANNEALING IN SEMICONDUCTORS

被引：27

作者：

NARAYAN, J

FLETCHER, J

WHITE, CW

CHRISTIE, WH

机构：

来源：

关键词：

D O I：

10.1063/1.328685

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：7121 / 7128

页数：8

共 28 条

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[2] AYDINLI A, UNPUBLISHED
[3] GROWTH INTERFACE BREAKDOWN DURING LASER RECRYSTALLIZATION FROM THE MELT
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[4] GROVE AS, 1967, PHYS TECHNOL S, P38
[5] SOME FEATURES OF LASER ANNEALING OF IMPLANTED SILICON LAYERS
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[7] RAMAN MEASUREMENT OF LATTICE TEMPERATURE DURING PULSED LASER-HEATING OF SILICON
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[8] Morris L. R., 1969, Journal of Crystal Growth, V5, P361, DOI 10.1016/0022-0248(69)90038-4
[9] STABILITY OF PLANAR INTERFACE DURING SOLIDIFICATION OF DILUTE BINARY ALLOY
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[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 444 - &
[10] DEPTH OF MELTING PRODUCED BY PULSED-LASER IRRADIATION
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[J]. APPLIED PHYSICS LETTERS, 1979, 34 (05) : 312 - 315