DETECTION OF DEEP-LEVEL (0.63 EV) RADIATIVE DEFECTS DURING DEGRADATION IN GAAS0.6P0.4 LIGHT-EMITTING-DIODES

被引：6

作者：

METZ, S ^{[1
]}

FRITZ, W ^{[1
]}

机构：

[1] UNIV STUTTGART,INST PHYS ELEKTR,D-7000 STUTTGART 80,FED REP GER

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 07期

关键词：

D O I：

10.1016/0038-1101(77)90098-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：603 / 606

页数：4

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