MODELING AND APPLICATION OF SYNCHRONIZATION OF NUCLEATION BY MEANS OF INTERMITTENT RADIANT HEATING

被引：4

作者：

LARSSON, MI

HANSSON, GV

机构：

[1] Department of Physics and Measurement Technology, Linköping University, Linköping

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 4B期

关键词：

SYNCHRONIZATION OF NUCLEATION; RADIANT HEATING; MONTE-CARLO SIMULATION; SI(111); RHEED; MBE; SI HOMOEPITAXY; SIGE HETEROEPITAXY;

D O I：

10.1143/JJAP.33.2282

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The method of synchronization of nucleation (SN) by means of periodically altering the substrate temperature has been studied theoretically by using a simple Monte Carlo simulation model and by applying a realistic temperature function. SN has also been studied experimentally using reflection high energy electron diffraction (RHEED) intensity oscillations. Results for SN applied to growth of Si and Si1-xGex on Si(111) are presented. Our growth simulations of Si on Si(111) support the experimental results that an improved layer-by-layer growth below the step flow regime can be obtained using SN.

引用

页码：2282 / 2289

页数：8

共 13 条

[1] ORIGIN OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY - A COMPUTATIONAL MODELING APPROACH [J].